Interstrip Capacitance of a Prototype Stipixel Detector
نویسنده
چکیده
We measured the inter-strip capacitance on a prototype DC-coupled "stripixel" detector (SPD) employing circular spirals with two methods, each of them employing a RC-chip to bias and read out the detectors. Both yielded the same value of Cint = 1.1 pF for a strip length of 1.4 mm, indicating the total inter-strip capacitance to be much larger than on ordinary silicon strip detectors (SSD).
منابع مشابه
Prototype Si microstrip sensors for the CDF-II ISL detector
Prototype Si microstrip sensors for the CDF-II ISL were fabricated by Hamamatsu Photonics and SEIKO Instruments using 4A technology. The sensor is AC coupled and double-sided forming a stereo angle of 1.2073. The strip pitch is 112 lm on both sides. The main di!erences between the two manufacturers lie on the technologies of passivation and the structure of coupling capacitors. We describe the ...
متن کاملTotal Dose Dependence of Oxide Charge, Interstrip Capacitance and Breakdown Behavior of sLHC Prototype Silicon Strip Detectors and Test Structures of the SMART Collaboration
Within the R&D Program for the luminosity upgrade proposed for the Large Hadron Collider (LHC), silicon strip detectors (SSD) and test structures were manufactured on several high-resistivity substrates: ptype Magnetic Czochralski (MCz) and Float Zone (FZ), and n-type FZ. To test total dose (TID) effects they were irradiated with Co gammas and the impact of surface radiation damage on the detec...
متن کاملAnalysis and Test of Overhanging-Metal Microstrip Detectors
The adoption of overhanging-metal contacts have been suggested as an effective mean to limit breakdown risks in heavy-damaged, high-voltage biased microstrip detectors. In this summary, the influence of such overhangs on device noise parameters is analyzed, with particular reference to the interstrip capacitance. Data have been collected on a set of detectors featuring variable overhang extensi...
متن کاملCharacteristics of Irradiated Silicon Microstrip Detectors with h100i and h111i Substrates
In a program of developing radiation-hard silicon sensors for the LHC-ATLAS experiment, we have irradiated various types of silicon sensors with 12 GeV protons at KEK. Among the other properties, we made a comparative study of characteristics of the sensors with two wafer planes h1 1 1i and h1 0 0i. The studied sensors are p-on-n type, which satisfy the ATLAS-SCT specifications. Possible depend...
متن کاملDevelopment of a small-scale prototype of the GOSSIPO-2 chip in 0.13 μm CMOS technology
The GOSSIP (Gas On Slimmed Silicon Pixel) detector is a proposed alternative for silicon based pixel detectors. The Gossip Prototype (GOSSIPO) chip is being developed to serve as a prototype read-out chip for such a gas-filled detector. Thanks to the very low capacitance at the preamplifier input, the front-end of the chip demonstrates low-noise performance in combination with a fast peaking ti...
متن کامل